View IXGH17N100AU1_248555.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 1000 V 1000 V
IC25 34 A 34 A
VCE(sat) 3.5 V 4.0 V
Combi Packs
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 82 Clamped inductive load, L = 100 H TC = 25C
Maximum Ratings 1000 1000 20 30 34 17 68 ICM = 34 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-247 AD
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features W C C C
l l
l l
Mounting torque (M3)
1.13/10 Nm/lb.in. 6 300 g C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
l
l
International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM
Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25C TJ = 125C 5.5 500 8 100 17N100U1 17N100AU1 3.5 4.0 V V A mA nA V V
l l l l
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 4.5 mA, VGE = 0 V = 500 A, VCE = VGE
l
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Advantages
l
l
l
Saves space (two devices in one package) Easy to mount (isolated mounting screw hole) Reduces assembly time and cost
(c) 1996 IXYS All rights reserved
91754D (3/96)
IXGH 17N100U1 IXGH 17N100AU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 15 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 210 40 100 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 300 H, VCE = 0.8 V CES, RG = Roff = 82 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 V CES, RG = Roff = 82 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG 17N100U1 17N100AU1 17N100U1 17N100AU1 17N100U1 17N100AU1 17N100AU1 20 60 100 200 500 750 450 3 100 200 2.5 700 1200 750 8 6 1000 2000 1000 1000 750 120 30 90 S pF pF pF nC nC nC ns ns ns ns ns mJ ns ns mJ ns ns ns mJ mJ 0.83 K/W 0.25 K/W
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
I C = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 16 120 35 18 50 V A ns ns
IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF /dt = 240 A/s VR = 540 V TJ = 125C IF = 1 A; -di/dt = 100 A/s; VR = 30 V TJ = 25C
1 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXGH 17N100U1 IXGH 17N100AU1
Fig. 1 Saturation Characteristics
35
TJ = 25C
Fig. 2 Output Characterstics
VGE = 15V
30
13V 11V 9V
150
T J = 25C V GE = 15V 13V
125
20 15 10 5 0 0 1 2 3 4 5 6 7
7V
IC - Amperes
IC - Amperes
25
100 75 50
9V 11V
25
7V
0
0
2
4
6
8
10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
TJ = 25C
Fig. 4 Temperature Dependence of Output Saturation Voltage
1.4
IC = 34A
1.3
V(sat) - Normalized
1.2 1.1 1.0 0.9 0.8 0.7 0.6
IC = 8.5A IC = 17A
VCE - Volts
6 5 4 3 2 1 0 5 6 7 8 9 10 11 12 13 14 15
IC = 34A IC = 17A IC = 8.5A
-50
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig. 5 Input Admittance
35
VCE= 10V
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
V GE(th) IC = 250A
30
IC - Amperes
25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10
T J = 25C T J = 125C T J = - 40C
BV / V(th) - Normalized
1.1 1.0 0.9 0.8 0.7 0.6 -50
BVCES IC = 3mA
-25
0
25
50
75
100 125 150
VCE - Volts
17N100G1 JNB
TJ - Degrees C
(c) 1996 IXYS All rights reserved
IXGH 17N100U1 IXGH 17N100AU1
Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area
15 13 11
VCE = 800 IC = 17A IG = 10mA
100
10
IC - Amperes
T J = 125C dV/dt < 3V/ns
VGE - Volts
9 7 5 3 1
1
0.1
0.01 0 10 20 30 40 50 60 70 80 90 100 0 200 400 600 800 1000
Gate Charge - (nC)
VCE - Volts
Fig.9 Capacitance Curves
2000
f = 1MHz
1750
Capacitance - pF
1500 1250 1000 750 500 250 0 0 5 10 15 20 25
C res C oes Cies
17N100g2.JNB
VCE - Volts
Fig.10 Transient Thermal Impedance
1
D=0.5 D=0.2
Zthjc (K/W)
D=0.1
0.1
D=0.05 D=0.02 D=0.01 Single Pulse D = Duty Cycle
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXGH 17N100U1 IXGH 17N100AU1
Fig.11 Maximum Forward Voltage Drop
100 80 50 40
Fig.12 Peak Forward Voltage VFR and Forward Recovery Time tFR
1000
TJ = 125C IF =37A VFR
800 600 400
tfr
Current - Amperes
60
TJ = 100C
30 20 10 0
40
TJ = 150C
20 0 0.5
TJ = 25C
200 0 600
1.0
1.5
2.0
2.5
3.0
3.5
0
100
200
300
400
500
Voltage Drop - Volts
diF /dt - A/s
Fig.13 Junction Temperature Dependence off IRM and Qr
1.4 1.2 1.0 0.8
IRM
Fig.14 Reverse Recovery Chargee
4
TJ = 100C VR = 540V max. IF = 30A
Qr - nanocoulombs
Normalized IRM /Q r
3
typ. IF = 60A IF = 30A IF = 15A
2
0.6 0.4 0.2 0.0 0 40 80 120 160
Qr
1
0 1 10 100 1000
TJ - Degrees C
diF /dt - A/s
Fig.15 Peak Reverse Recovery Current
50 40
TJ = 100C VR = 540V
Fig.16 Reverse Recovery Time
0.8
max. IF = 30A TJ = 100C VR = 540V
max. IF = 30A
30 20 10 0 200 400 600
typ. IF = 60A IF = 30A IF = 15A
trr - nanoseconds
0.6
typ. IF = 60A IF = 30A IF = 15A
IRM - Amperes
0.4
0.2
0.0 0 200 400 600
diF /dt - A/s
diF /dt - A/s
(c) 1996 IXYS All rights reserved
tfr - nanoseconds
VFR - Volts
IXGH 17N100U1 IXGH 17N100AU1
Fig.17 Diode Transient Thermal resistance junction to case
1.00
RthJC - K/W
0.10
0.01 0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

▲Up To Search▲

Price & Availability of IXGH17N100AU1

	To Download IXGH17N100AU1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .